CSD86350Q5DT
- TI
- China
- 21+/22+
- 5000~50000
1, super large EMS factory supply, the best storage conditions;
2, the original factory has not opened the original standard (the whole package), the quality is guaranteed;
3, non-special control materials can not be painted;
4, the latest year products, available for a variety of scarce materials;
| Product Attribute | Attribute Value | Select Attribute |
|---|---|---|
| Texas Instruments | ||
| Product Category: | MOSFET | |
| RoHS: | Details | |
| Si | ||
| SMD/SMT | ||
| SON-8 | ||
| N-Channel | ||
| 2 Channel | ||
| 25 V | ||
| 40 A | ||
| 5 mOhms, 1.1 mOhms | ||
| - 8 V, + 8 V | ||
| 900 mV | ||
| 10.7 nC, 25 nC | ||
| - 55 C | ||
| + 125 C | ||
| 13 W | ||
| Enhancement | ||
| CSD86350Q5D | ||
| Reel | ||
| Cut Tape | ||
| Brand: | Texas Instruments | |
| Configuration: | Dual | |
| Fall Time: | 2.3 ns, 21 ns | |
| Forward Transconductance - Min: | 103 S, 132 S | |
| Product Type: | MOSFET | |
| Rise Time: | 21 ns, 23 ns | |
| 250 | ||
| Subcategory: | MOSFETs | |
| Transistor Type: | 2 N-Channel | |
| Typical Turn-Off Delay Time: | 9 ns, 24 ns | |
| Typical Turn-On Delay Time: | 8 ns, 9 ns | |
| Unit Weight: | 0.005305 oz |
